c-45 parameter min. typ. max. units r q jc junction-to-case ? ? 1.2 r q cs case-to-sink, flat, greased surface ? 0.24 ? c/w r q ja junction-to-ambient, typical socket mount ? ? 40 wt weight ? 6 (0.21) ? g (oz) IRGPH30S standard speed igbt insulated gate bipolar transistor features ? switching-loss rating includes all "tail" losses ? optimized for line frequency operation (to 400hz) v ces = 1200v v ce(sat) 3.0v @v ge = 15v, i c = 13a e c g n - c h a n n e l description insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high- current applications. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 22 i c @ t c = 100c continuous collector current 13 a i cm pulsed collector current 44 i lm clamped inductive load current 44 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy 10 mj p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 13 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) thermal resistance t o - 2 4 7 a c preliminary data sheet pd - 9.1139 revision 0
c-46 IRGPH30S parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 28 42 i c = 13a q ge gate - emitter charge (turn-on) ? 8.2 12 nc v cc = 400v q gc gate - collector charge (turn-on) ? 6.8 10 v ge = 15v t d(on) turn-on delay time ? 28 ? t j = 25c t r rise time ? 22 ? ns i c = 13a, v cc = 960v t d(off) turn-off delay time ? 1200 1800 v ge = 15v, r g = 23 w t f fall time ? 680 1140 energy losses include "tail" e on turn-on switching loss ? 0.90 ? e off turn-off switching loss ? 12 ? mj e ts total switching loss ? 13 19 t d(on) turn-on delay time ? 26 ? t j = 150c, t r rise time ? 27 ? ns i c = 13a, v cc = 960v t d(off) turn-off delay time ? 1280 ? v ge = 15v, r g = 23 w t f fall time ? 2000 ? energy losses include "tail" e ts total switching loss ? 23 ? mj l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 685 ? v ge = 0v c oes output capacitance ? 43 ? pf v cc = 30v c res reverse transfer capacitance ? 8.3 ? ? = 1.0mhz switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 20 ? ? v v ge = 0v , i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage ? 1.5 ? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.0 3.0 i c = 13a ? 2.8 ? v i c = 22a see fig. 2, 5 ? 2.6 ? i c = 13a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -12 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 3.1 6.3 ? s v ce = 100v, i c = 13a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 1200v ? ? 1000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) notes: repetitive rating; v ge =20v, pulse width limited by max. junction temperature. repetitive rating; pulse width limited by maximum junction temperature. v cc =80%(v ces ), v ge =20v, l=10h, r g = 23 w pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. refer to section d - page d-13 package outline 3 - jedec outline to-247ac (to-3p)
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